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SKM 600GA126D
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMITRANS(R) 4 Trench IGBT Modules
SKM 600GA126D Module Preliminary Data Inverse Diode
Features
Characteristics Symbol Conditions IGBT
min.
typ.
max.
Units
Typical Applications
GA
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11-09-2006 RAA
(c) by SEMIKRON
SKM 600GA126D
Characteristics Symbol Conditions Inverse diode min. typ. max. Units
SEMITRANS(R) 4 Trench IGBT Modules
Module SKM 600GA126D
Preliminary Data
Features
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
Typical Applications
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
GA
2
11-09-2006 RAA
(c) by SEMIKRON
SKM 600GA126D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
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11-09-2006 RAA
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SKM 600GA126D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
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SKM 600GA126D
UL Recognized File no. 63532
5
11-09-2006 RAA
(c) by SEMIKRON

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